JPH0217930B2 - - Google Patents
Info
- Publication number
- JPH0217930B2 JPH0217930B2 JP56077651A JP7765181A JPH0217930B2 JP H0217930 B2 JPH0217930 B2 JP H0217930B2 JP 56077651 A JP56077651 A JP 56077651A JP 7765181 A JP7765181 A JP 7765181A JP H0217930 B2 JPH0217930 B2 JP H0217930B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon layer
- substrate
- gate electrode
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56077651A JPS57193063A (en) | 1981-05-22 | 1981-05-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56077651A JPS57193063A (en) | 1981-05-22 | 1981-05-22 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57193063A JPS57193063A (en) | 1982-11-27 |
JPH0217930B2 true JPH0217930B2 (en]) | 1990-04-24 |
Family
ID=13639789
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56077651A Granted JPS57193063A (en) | 1981-05-22 | 1981-05-22 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57193063A (en]) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0434827U (en]) * | 1990-07-16 | 1992-03-24 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010059735A (ko) * | 1999-12-30 | 2001-07-06 | 박종섭 | 금속 게이트전극을 갖는 모스트랜지스터 제조방법 |
-
1981
- 1981-05-22 JP JP56077651A patent/JPS57193063A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0434827U (en]) * | 1990-07-16 | 1992-03-24 |
Also Published As
Publication number | Publication date |
---|---|
JPS57193063A (en) | 1982-11-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4373249A (en) | Method of manufacturing a semiconductor integrated circuit device | |
KR900007905B1 (ko) | 반도체장치 | |
KR960012298B1 (ko) | 반도체장치의 제조방법 | |
KR900008207B1 (ko) | 반도체기억장치 | |
JPH0523055B2 (en]) | ||
EP0024125B1 (en) | Process for producing a semiconductor device | |
KR100255541B1 (ko) | 반도체 디바이스의 제조공정 | |
EP0051500B1 (en) | Semiconductor devices | |
KR19980053694A (ko) | Mosfet 제조 방법 | |
EP0459398B1 (en) | Manufacturing method of a channel in MOS semiconductor devices | |
JP2790157B2 (ja) | 半導体集積回路装置の製造方法 | |
JPH0217930B2 (en]) | ||
US5985712A (en) | Method of fabricating field effect transistor with an LDD structure | |
JPH07161988A (ja) | 半導体装置の製造方法 | |
JPH08130216A (ja) | 半導体装置およびその製造方法 | |
KR100299896B1 (ko) | 반도체장치제조방법 | |
JPS61267365A (ja) | 半導体装置 | |
JPS59169179A (ja) | 半導体集積回路装置 | |
KR100203910B1 (ko) | 모스 전계 효과 트랜지스터의 제조방법 | |
KR100357299B1 (ko) | 반도체소자의트랜지스터제조방법 | |
JPH06204456A (ja) | 半導体装置 | |
KR100197996B1 (ko) | 반도체 소자의 제조방법 | |
JPH0466108B2 (en]) | ||
KR100280799B1 (ko) | 반도체 소자의 접합층 형성 방법 | |
JPS6097668A (ja) | 半導体装置及びその製造方法 |